200-550V MOSFET

WXDH

东海半导体

N-Channel Enhancement Mode Power MOSFET

文件：561.78 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

文件：112.37 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

文件：536.78 Kbytes 页数：3 Pages

ISC

无锡固电