丝印：DGTD65T40S2；Package：TO247；650V FIELD STOP IGBT IN TO247

Features High Speed Switching & Low Power Loss VCE(SAT) = 1.8V @ IC = 40A tRR = 60ns (Typ) @ diF/dt = 820A/μs EOFF = 0.4mJ @ TC = +25°C Maximum Junction Temperature +175°C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive appli

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DIODES

美台半导体

650V FIELD STOP IGBT IN TO247

The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance. •High Speed Switching & Low Power Loss\n•VCE(sat) = 1.8V @ IC = 40A\n•trr = 60ns (typ) @ diF/dt = 820A/µs\n•Eoff = 0.4mJ @ TC=25°C\n•Maximum Junction Temperature +175°C;

Diodes

美台半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V-X TO247 TUBE 0.45K

DIODES

美台半导体