HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

文件：772.33 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER

文件：617.89 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

文件：772.33 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

文件：843.62 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER

文件：660.77 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

文件：843.62 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

文件：722.28 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

The DGD21064 is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD21064’s high-side to switch to 600V in a bootstrap operation.The DGD21064 logic inputs are compatible with standard •Floating High-Side Driver in Bootstrap Operation to 600V\n•Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuation\n•Outputs Tolerant to Negative Transients\n•Wide Logic and Low-Side Gate Driver Supply Voltage: 10V to 20V\n•Wide Logic Supply Voltage Offset Voltage: -5V to 5V\n•Logic Input;

Diodes

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

The DGD2106M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation.The DGD2106M logic inputs are compatible with standard Floating High-Side Driver in Bootstrap Operation to 600V\nDrives two N-Channel MOSFETs or IGBTs in Half Bridge Configuation\nOutputs Tolerant to Negative Transients\nWide Logic and Low-Side Gate Driver Supply Voltage: 10V To 20V\nLogic Input (HIN and LIN) 3.3V Capability\nSchmitt Triggered Logic Inp;

Diodes

美台半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

PAM

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