250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

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HALF-BRIDGE GATE DRIVER IN SO-8

文件：967.79 Kbytes 页数：11 Pages

DIODES

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丝印：DGD1504；Package：SO-8；250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

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HALF-BRIDGE GATE DRIVER IN SO-8

The DGD1504 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD1504’s high side to switch to 250V in a bootstrap operation.\nThe DGD1504 logic inputs are compatible with standard T Floating High-Side Driver in Bootstrap Operation to 250V\nDrives two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration\n290mA Source / 600mA Sink Output Current Capability\nOutputs Tolerant to Negative Transients\nInternal Dead Time of 430ns to Protect MOSFETs\nWide Low-Side Gate Driver Supp;

Diodes

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250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

PAM

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