丝印：DGD1504；Package：SO-8；250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

美台半导体

丝印：DGD1504；Package：SO-8；250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

美台半导体

250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

美台半导体

250V HALF-BRIDGE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 250V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：1.17898 Mbytes 页数：11 Pages

DIODES

美台半导体

HALF-BRIDGE GATE DRIVER IN SO-8

文件：967.79 Kbytes 页数：11 Pages

DIODES

美台半导体