DB3

SILICON DIAC BIDIRECTIONAL TRIGGER DIODE GLASS PASSIVATED PNPN DEVICE

SILICONDIACBIDIRECTIONALTRIGGERDIODESGLASSPASSIVATEDPNPNDEVICE FunctioningasaTriggerDiodewithaFixedVoltageReference,DB3/DB4canbeusedinConjunctionwithTriacsforSimplifiedGateControlCircuitsorasaStartingElementinFluorescentLampBallasts DO-35 GlassAxialPack

DB3

Trigger Diodes

Description ◆Highreliabilityglasspassivationinsuringparameterstabilityand protectionagainstjunctioncontamination. Features ◆VBO:32V/34V/40VVersions ◆LowBreakoverCurrent

DB3

SILICON BIDIRECTIONAL DIACS

Features ●VBO:28-36V ●LowBreakoverCurrent MechanicalData ●Case:MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Weight:0.35grams(approx.) ●MountingPosition:Any ●Marking:TypeNumber ●LeadFree:ForRoHS/LeadFree

DB3

BIDIRECTIONAL TRIGGER DIODE

ReverseVoltage-32VoltsPower:150mW FEATURES ♦Theplasticpackage ♦VBO:28-36Vversion ♦Lowbreakovercurrent ♦Hightemperaturesolderingguaranteed 250°C/10seconds,0.375”(9.5mm)leadlength, 5lbs.(2.3kg)tension

DB3

SILICON BIDIRECTIONAL DIACS

VOLTAGERANGE:28-45V FEATURES ◇Thethreelayer,twotermnal,axiallead,hermetically sealeddiacsaredesignedspecificallyfortriggering thyristors.Theydemonstratelowbreakovercurrentat breakovervoltageastheywithstandpeakpulse current,Thebreakoversymmetryiswithin

DB3

Silicon Bidirectional Diacs

Features ◇Thethreelayer,twotermnal,axiallead,hermetically1sealeddiacsaredesignedspecificallyfortriggering1thyristors.Theydemonstratelowbreakovercurrentat1breakovervoltageastheywithstandpeakpulse1current,Thebreakoversymmetryiswithinthree1volts(DB3,DB4).Thesediacs

DB3

2A Axial Leaded Silicon Bilateral Voltage Triggered

Features •Threewaylayertwoterminal,axiallead, hermeticallysealeddiacsaredesignedspecificallyfor riggeringthyrisitors.Thedemonstratelowbreakovercurrent. Thebreakoversymmetryiswithinthreevolts(DB3,DB4) orfourvolts(DB6).Thesediacsareintendedfor use

DB3

SILICON BIDIRECTIONAL DIAC

FEATURES •Thethree-layer,two-terminal,axial-lead,hermeticallysealeddiacsare designedspecificallyfortriggeringthyristors.Theydemonstratelowbreakover currentatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakover symmetryiswithinthreevolts(DB3,DC34,

DB3

SILICON BIDIRECTIONAL DIACS

FEATURES Thethreelayer,twotermnal,axiallead,hermetically sealeddiacsaredesignedspecificallyfortriggering thyristors.Theydemonstratelowbreakovercurrentat breakovervoltageastheywithstandpeakpulse current,Thebreakoversymmetryiswithinthree volts(DB3,DB4).Thesediacsar

DB3

SILICON BIDIRECTIONAL DIACS

FEATURES Thethreelayer,twotermnal,axiallead,hermetically sealeddiacsaredesignedspecificallyfortriggering thyristors.Theydemonstratelowbreakovercurrentat breakovervoltageastheywithstandpeakpulse current,Thebreakoversymmetryiswithinthree volts(DB3,DB4).Thesediacsar