DB3

SILICON BIDIRECTIONAL DIACS

FEATURES Thethreelayer,twotermnal,axiallead,hermetically sealeddiacsaredesignedspecificallyfortriggering thyristors.Theydemonstratelowbreakovercurrentat breakovervoltageastheywithstandpeakpulse current,Thebreakoversymmetryiswithinthree volts(DB3,DB4).Thesediacsar

DB3

SILICON BIDIRECTIONAL DIAC

FEATURES Thethreelayer,twoterminal,axiallead,hermeticallysealeddiacsare designedspecificallyfortriggeringthyristors.Theydemonstratelowbreakover currentatbreakovervoltageastheywithstandpeakpulsecurrent,Thebreakover symmetryiswithinthreevolts(DB3,DC34,DB4)orfourv

DB3

SILICON BIDIRECTIONAL DIAC

FEATURES Thethreelayer,twoterminal,axiallead,hermeticallysealeddiacsare designedspecificallyfortriggeringthyristors.Theydemonstratelowbreakover currentatbreakovervoltageastheywithstandpeakpulsecurrent,Thebreakover symmetryiswithinthreevolts(DB3,DC34,D

DB3

SILICON BIDIRECTIONAL DIAC

FEATURE Thethreelayer,twoterminal,axiallead,hermeticallysealed diacsaredesignedspecificallyfortriggeringthyristors.They demonstratelowbreakovercurrentatbreakovervoltageas theywithstandpeakpulsecurrentThebreakoversymmetryis withinthreevolts(DB3,DC34,

DB3

Silicon Bidirectional Trigger Diodes

SiliconBidirectionalTriggerDiodes Thesediacsareintendedforuseinthyristorphasecontrol, circuitsforlamp-dimming,universal-motorspeedcontrols,and heatcontrols.

DB3

BI-DIRECTIONAL DIACS

BREAKDOWNVOLTAGE32/40/60VOLTS LOWBREAKOVERCURRENT FEATURES •Lowbreakovercurrentatbreakovervoltage. •Foruseinthyristorphase-controlcircuitforlampdimming, universal-motorspeedcontrolandheatcontrols. MECHANICALDATA *Case:Moldedplastic,DO-41 *Epoxy:UL94V-Orat

DB3

Trigger Diodes

Description ◆Highreliabilityglasspassivationinsuringparameterstabilityand protectionagainstjunctioncontamination. Features ◆VBO:32V/34V/40VVersions ◆LowBreakoverCurrent

DB3

SILICON BI-DIRECTIONAL DIACS

DB3

BIDIRECTIONAL TRIGGER DIODE Low breakover current

DB3

Silicon Bidirectional Diacs