MOSFET

Jingheng

晶恒

丝印：D70N10；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：297.1 Kbytes 页数：8 Pages

PANJIT

強茂

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：637.49 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：368.66 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：624.78 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体