丝印：D45C12G；Package：TO-220AB；Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

文件：123.5 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

丝印：D45C12G；Package：TO-220AB；Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

文件：123.5 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistor

Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. Features • Low Collector-Emitter Saturation Voltage - 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Curren

文件：78.83 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

文件：123.5 Kbytes 页数：3 Pages

ONSEMI

安森美半导体