型号：SN74LVC1G374YZPR；Package：DSBGA；Single D-Type Flip-Flop With 3-State Output

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V V CC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Suppo

文件：739.59 Kbytes 页数：22 Pages

TI2

德州仪器

型号：SN74LVC1G374YZPR；Package：DSBGA；Single D-Type Flip-Flop With 3-State Output

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V V CC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Suppo

文件：740.79 Kbytes 页数：22 Pages

TI2

德州仪器

型号：SN74LVC1G374YZPR.B；Package：DSBGA；Single D-Type Flip-Flop With 3-State Output

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V V CC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Suppo

文件：740.79 Kbytes 页数：22 Pages

TI2

德州仪器

型号：PJD4NA50A_L2_00001；Package：TO-252AA；500V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@2A

文件：394.47 Kbytes 页数：8 Pages

PANJIT

強茂

型号：STD4NK60Z-1；Package：IPAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：731.33 Kbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

型号：STD4NK60ZT4；Package：DPAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：731.33 Kbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

型号：D4NE60；Package：TO-252；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37912 Mbytes 页数：13 Pages

WXDH

东海半导体

型号：D4NE60；Package：TO-252；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37968 Mbytes 页数：13 Pages

WXDH

东海半导体

型号：D4NE60；Package：TO-252；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37903 Mbytes 页数：13 Pages

WXDH

东海半导体

型号：D4NE60；Package：TO-252；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.38412 Mbytes 页数：13 Pages

WXDH

东海半导体