HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - SMD PACKAGES WITH SMALL DIMENSIONS AND LOW PROFILE - EXCELLENT ATTENUATION BEHAVIOUR

文件：83.86 Kbytes 页数：7 Pages

PETERMANN

128M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi

文件：1.10737 Mbytes 页数：92 Pages

NEC

瑞萨

128M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pi

文件：1.10737 Mbytes 页数：92 Pages

NEC

瑞萨

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

文件：121.91 Kbytes 页数：5 Pages

AOSMD

万国半导体

European Power- Semiconductor and Electronics Company

450A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier

文件：101.58 Kbytes 页数：5 Pages

eupec

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - SMD PACKAGES WITH SMALL DIMENSIONS AND LOW PROFILE - EXCELLENT ATTENUATION BEHAVIOUR

文件：83.86 Kbytes 页数：7 Pages

PETERMANN

Dual Operational Amplifier

FEATURES ● No frequency Compensation Required ● No latch-up ● Large common mode and differential voltage range ● Parameter tracking over temperature range ● Gain and phase match between amplifiers ● Internally frequency compensated ● Low noise input transistors

文件：405.1 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Dual Operational Amplifier

FEATURES ● No frequency Compensation Required ● No latch-up ● Large common mode and differential voltage range ● Parameter tracking over temperature range ● Gain and phase match between amplifiers ● Internally frequency compensated ● Low noise input transistors

文件：405.1 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Dual Operational Amplifier

FEATURES ● No frequency Compensation Required ● No latch-up ● Large common mode and differential voltage range ● Parameter tracking over temperature range ● Gain and phase match between amplifiers ● Internally frequency compensated ● Low noise input transistors

文件：405.1 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipelin

文件：919.98 Kbytes 页数：85 Pages

ELPIDA

尔必达