丝印：D45；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES • These diodes are also available in other case    styles and configurations including: the dual    diode common cathode configuration with type    designation DZ23, the single diode SOT-23    case with the type designation BZX84C, and the    single diode SOD-123 case with the type

文件：122.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：D45；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES • These diodes are also available in other case    styles and configurations including: the dual    diode common cathode configuration with type    designation DZ23, the single diode SOT-23    case with the type designation BZX84C, and the    single diode SOD-123 case with the type

文件：122.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：D45；Package：SC70；Single D-Type Flip-Flop With 3-State Output

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V V CC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Suppo

文件：739.59 Kbytes 页数：22 Pages

TI

德州仪器

丝印：D45；Package：SC70；Single D-Type Flip-Flop With 3-State Output

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V V CC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Suppo

文件：740.79 Kbytes 页数：22 Pages

TI

德州仪器

丝印：D45；Package：SC70；Single D-Type Flip-Flop With 3-State Output

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V V CC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max tpd of 4 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Suppo

文件：740.79 Kbytes 页数：22 Pages

TI

德州仪器

丝印：D45C12；Package：TO-220AB；Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

文件：123.5 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

丝印：D45C12G；Package：TO-220AB；Complementary Silicon Power Transistor

Features • Low Collector−Emitter Saturation Voltage − 0.5 V (Max) • High ft for Good Frequency Response • Low Leakage Current • Pb−Free Packages are Available*

文件：123.5 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

丝印：D45H11FP；Package：TO-220FP；Complementary power transistors

Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are manufactured in multi epitaxial planar technology for general purpose in linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fas

文件：191.06 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

文件：90.16 Kbytes 页数：5 Pages

PETERMANN

DISTRIBUTED GATE THYRISTORS

[Westcode] Distributed Gate Thyristors ~ All types

文件：379.22 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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