SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

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INFINEON

英飞凌

Quad Bilateral Switch

General Description The CD4066BC is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with CD4016BC, but has a much lower “ON” resistance, and “ON” resistance is relatively constant over the input-signal range. Featur

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FAIRCHILD

仙童半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free*

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AOSMD

万国半导体

30-50 VOLTS .5 AMP, 6.25 WATTS

Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-amplifier, and capacitor multiplier applications. Features: • hFE Min. — 10,000 and 40,000 • 1.33 Watt power dissipation at TA =25°

文件：1.03531 Mbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

30-50 VOLTS .5 AMP, 6.25 WATTS

Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-amplifier, and capacitor multiplier applications. Features: • hFE Min. — 10,000 and 40,000 • 1.33 Watt power dissipation at TA =25°

文件：1.03531 Mbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON DARLINGTON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR D40C1 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required. MARKING: FULL PART NUMBER

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CENTRAL

NPN SILICON DARLINGTON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR D40C4 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required. MARKING: FULL PART NUMBER

文件：425.65 Kbytes 页数：2 Pages

CENTRAL

30-50 VOLTS .5 AMP, 6.25 WATTS

Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-amplifier, and capacitor multiplier applications. Features: • hFE Min. — 10,000 and 40,000 • 1.33 Watt power dissipation at TA =25°

文件：1.03531 Mbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON DARLINGTON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR D40C7 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required. MARKING: FULL PART NUMBER

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CENTRAL

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 10K-70K • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general-purpose amplifier and low-speed switching

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ISC

无锡固电