丝印：D4；Package：SOT-23-5；Ultra Low Power, Excellent EMI Immunity, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+ = 3V, Typical value, Ta = 25°C)  Ultra Low Power Single 0.7μA (all channel) Dual 1.2μA (all channel)  Integrated EMI Filter EMIRR = 100dB (f = 1.8GHz)  Rail-to-Rail Input -Common-Mode Input Voltage Range V− to V++0.2V  Dynamic Transient Stabilizer TM - Rail-to-Rail Input

文件：2.09805 Mbytes 页数：33 Pages

NISSHINBO

日清纺微电子

丝印：D4；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.12964 Mbytes 页数：19 Pages

NEXPERIA

安世

丝印：D4；Package：SOD123W；High-temperature 400 W Transient Voltage Suppressor

1. General description 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection in high-temperature applications. 2. Features and benefits • Rated peak pulse

文件：233.42 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：D4；Package：X1-DFN1411-3；1.0A SBR® SUPER BARRIER RECTIFIER

Features Ultra Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability +150°C Operating Junction Temperature Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No

文件：264.09 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：D4；Package：U-DFN1608-2；1.0A SURFACE MOUNT SCHOTTKY

Features Reduced ultra-low forward voltage drop (VF). Better efficiency and cooler operation. Reduced high temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：384.46 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：D4；Package：U-DFN1608-2；1.0A SURFACE MOUNT SCHOTTKY

Features Reduced ultra-low forward voltage drop (VF). Better efficiency and cooler operation. Reduced high temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：448.5 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：D4；Package：WLCSP；Very Low Quiescent Current, 150 mA, LDO Regulator

文件：605.33 Kbytes 页数：23 Pages

AD

亚德诺

丝印：D4；Package：SOD-523；1-Line Bi-directional TVS Diode

文件：515.47 Kbytes 页数：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：D4；Package：SOT-883；45 V, 100 mA NPN general-purpose transistors

文件：131.51 Kbytes 页数：18 Pages

PHI

PHI

丝印：D4；Package：SOT-883；45 V, 100 mA NPN general-purpose transistors

文件：104.72 Kbytes 页数：15 Pages

恩XP