丝印：D3NK60Z；Package：DPAK；N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：936.59 Kbytes 页数：34 Pages

STMICROELECTRONICS

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丝印：D3NK80Z；Package：IPAK；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

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丝印：D3NK80Z；Package：IPAK；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：608.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：D3NK80Z；Package：DPAK；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NK80Z；Package：DPAK；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：608.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：D3NK90Z；Package：IPAK；N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：613.22 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NK90Z；Package：DPAK；N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：613.22 Kbytes 页数：13 Pages

STMICROELECTRONICS

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丝印：D3NK90Z；Package：DPAK；N-channel 900 V, 4.1 廓 typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：662.23 Kbytes 页数：20 Pages

STMICROELECTRONICS

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丝印：D3NK90Z；Package：DPAK；N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：563.35 Kbytes 页数：24 Pages

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丝印：D3NM60；Package：DPAK；N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

文件：723.01 Kbytes 页数：17 Pages

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