丝印：D3N；Package：SOT-23；Zener Diode

文件：989.18 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：D3N；Package：SOT-23；Zener Diode

文件：990.39 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：D3N；Package：SOT-23；Zener Diode

文件：991.6 Kbytes 页数：7 Pages

ROHM

罗姆

丝印：D3N；Package：SOT-23；Zener Diode

文件：989.83 Kbytes 页数：7 Pages

ROHM

罗姆

3A, 500V N-Channel MOSFET

General Description The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability

文件：174.35 Kbytes 页数：6 Pages

AOSMD

万国半导体

N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：75.21 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

400V,2.6A N-Channel MOSFET

文件：395.16 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：D3NA80；Package：TO-252AA；800V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@1.5A

文件：467.25 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D3NK60Z；Package：IPAK；N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：936.59 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体