RF Power GaN Transistor

文件：344.75 Kbytes 页数：8 Pages

恩XP

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

文件：424.62 Kbytes 页数：12 Pages

恩XP

Miniature, 1W SIP Dual Isolated Output DC/DC Con vert ers

文件：141.09 Kbytes 页数：2 Pages

MPD

High Isolation Miniature, 1W SIP DC/DC Converters

文件：201.36 Kbytes 页数：2 Pages

MPD

Tightly Regulated Miniature, 1W SIP DC/DC Converters

文件：233.89 Kbytes 页数：2 Pages

MPD

丝印：D123TS；Package：SPT/SC-72；Digital transistors (built-in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advanta

文件：49.08 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：D123YS；Package：SPT/SC-72；Digital transistors (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advant

文件：70.8 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：D123ES；Package：SOT-54；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital

文件：68.04 Kbytes 页数：10 Pages

PHI

PHI

丝印：D123ES；Package：SOT-54；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs ■ 500 mA output current capability ■ ±10 resistor ratio tolerance Applications ■ Digital

文件：131.77 Kbytes 页数：10 Pages

恩XP

丝印：D123ES；Package：SC-43A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：245.81 Kbytes 页数：11 Pages

NEXPERIA

安世