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PDTD123ES

Marking:D123ES;Package:SC-43A;NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTD123ES

Marking:D123ES;Package:SOT-54;NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

DTD123ES

Marking:D123ES;Package:SPT/SC-72;Digital transistors (built-in resistors)

ROHMRohm

罗姆罗姆半导体集团

DTD123ES

Marking:D123ES;Package:SPT/SC-72;500mA / 50V Digital transistors (with built-in resistors)

ROHMRohm

罗姆罗姆半导体集团

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