METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W – 28V – 175MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 M

文件：63.62 Kbytes 页数：4 Pages

SEME-LAB

Seme LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen

文件：583 Kbytes 页数：11 Pages

DIODES

美台半导体

METAL GATE RF SILICON FET

文件：93.64 Kbytes 页数：5 Pages

SEME-LAB

Seme LAB

METAL GATE RF SILICON FET

文件：93.64 Kbytes 页数：5 Pages

SEME-LAB

Seme LAB