D1029UK

METAL GATE RF SILICON FET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET350W–28V–175MHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom1MHzto200M

D1029UK

Gold metallised multi-purpose silicon DMOS RF FET; •Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum\n;

DMC1029UFDB

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwitch PowerManagemen

DMD1029

METALGATERFSILICONFET

DMD1029-A

METALGATERFSILICONFET

DMG1029SV

N-andP-Channel60V(D-S)MOSFET

APPLICATIONS ReplaceDigitalTransistor,Level-Shifter PowerSupplyConverterCircuits BatteryOperatedSystems

DMG1029SV

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

DMN1029UFDB

N-CHANNEALENHANCEMENTMODEMOSFET

EPM1029GE

ModemTransformer

EPR1029

T1/CEPT/ISDN-PRIInterfaceTransformers