Quadruple Repeater Power Supply DIN-Rail Model D1012Q

文件：251.15 Kbytes 页数：2 Pages

GMI

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Quadruple Repeater Power Supply DIN-Rail Model D1012Q

文件：251.15 Kbytes 页数：2 Pages

GMI

METAL GATE RF SILICON FET

文件：50.55 Kbytes 页数：4 Pages

SEME-LAB

Seme LAB

丝印：D1012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.0387 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D1012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07605 Mbytes 页数：12 Pages

Infineon

英飞凌

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

Power MOSFET

NIKO-SEM

尼克森