Operate on the main AC line 100V and 200V

Operate on the main AC line 100V and 200V

文件：1.18259 Mbytes 页数：18 Pages

Sanken

三垦

Miniature Snap-in Power Rocker Switches

Features/Benefits • Momentary and maintained models • PC and quick connect terminals • Recessed bracket available — prevents accidental actuation • RoHS compliant • Gold plated options available

文件：482.55 Kbytes 页数：5 Pages

CK-COMPONENTS

力特

Single & Dual Output Miniature, 1W SIP DC/DC Converters

文件：200.56 Kbytes 页数：2 Pages

MPD

Control/Communicators

文件：45.7 Kbytes 页数：8 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Optical Liquid Level Sensors

文件：190.34 Kbytes 页数：1 Pages

AEC

32位浮点数字信号处理器

D101是一款300MHz的浮点数字信号处理器，峰值性能达到1.8GFLOPS@32bit。该产品采用VLIW超长指令字架构、SIMD单指令多数据结构、八级流水线硬件设计，单周期可并行执行四条32位指令。该处理器支持32位单精度浮点运算和40扩展精度浮点运算，支持64、32、16、8位定点运算；拥有丰富的外围接口，常常与FPGA搭配使用。\n\nD101处理器非常适合多媒体图像处理、无线通信、自动控制、仪表等应用领域。

FDMTEK

中科本原

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 40

文件：50.33 Kbytes 页数：5 Pages

SEME-LAB

Seme LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400

文件：15.49 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GH

文件：49.86 Kbytes 页数：4 Pages

SEME-LAB

Seme LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to

文件：223.12 Kbytes 页数：5 Pages

SEME-LAB

Seme LAB