METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 40

文件：50.33 Kbytes 页数：5 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

文件：56.47 Kbytes 页数：2 Pages

PANJIT

強茂

GaAs N-Channel MES IC

文件：39.03 Kbytes 页数：2 Pages

PANASONIC

松下

FAST SWITCHING PLASTIC DIODES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-

文件：59.58 Kbytes 页数：2 Pages

PANJIT

強茂