METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400

文件：15.49 Kbytes 页数：2 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Useful P(o) at 1 GHz\n• Low noise\n• High gain - 12 dB minimum;

TT Electronics

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.5 Kbytes 页数：2 Pages

POLYFET

Low-power frequency synthesizer for mobile radio communications

GENERAL DESCRIPTION The UMA1014 is a low-power universal synthesizer which has been designed for use in channelized radio communication. The IC is manufactured in bipolar technology and is designed to operate at 5 to 100 kHz channel spacing with an RF input from 50 to 1100 MHz. The channel is p

文件：90.48 Kbytes 页数：17 Pages

PHI

PHI

Low-power frequency synthesizer for mobile radio communications

GENERAL DESCRIPTION The UMA1014 is a low-power universal synthesizer which has been designed for use in channelized radio communication. The IC is manufactured in bipolar technology and is designed to operate at 5 to 100 kHz channel spacing with an RF input from 50 to 1100 MHz. The channel is p

文件：90.48 Kbytes 页数：17 Pages

PHI

PHI