OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 16 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：35.51 Kbytes 页数：4 Pages

SEME-LAB

Seme LAB

10 AMP SILICON BRIDGE RECTIFIERS

FEATURES ● VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

文件：404.26 Kbytes 页数：2 Pages

DEC

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2

文件：493.41 Kbytes 页数：7 Pages

DIODES

美台半导体

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici

文件：375.17 Kbytes 页数：7 Pages

DIODES

美台半导体