10 AMP SILICON BRIDGE RECTIFIERS

FEATURES ● VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

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DEC

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • 0.6mm Profile – Ideal for Low-Profile Applications • PCB Footprint of 4mm2

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DIODES

美台半导体

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – Ensures On-State Losses are Minimized • Small Form Factor Thermally Effici

文件：375.17 Kbytes 页数：7 Pages

DIODES

美台半导体

SILICON BRIDGE RECTIFIERS

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EIC