Standard Thick Film Chip Resistors

FEATURES • Stability at different environmental conditions R/R 1 (1000 h rated power at 70 °C) • 2 mm pitch packaging option for 0603 size • AEC-Q200 qualified • Material categorization: for definitions of compliance APPLICATIONS • Automotive • Industrial • Telecommunication

文件：121.45 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Pulse Proof Thick Film Chip Resistors

FEATURES • High pulse performance, up to 10 kW • High pulse voltage up to 4 kV, 1.2 μs / 50 μs • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/do

文件：145.49 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Lead (Pb)-Bearing Thick Film, Rectangular, Semi-Precision Chip Resistors

FEATURES • Low temperature coefficient (± 50 ppm/K) and tight tolerances (± 0.5 ) • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：135.24 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Semi-Precision Thick Film Chip Resistors

FEATURES • Low temperature coefficient (± 50 ppm/K) and tight tolerances (± 0.5 ) • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：133.65 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

D COMPACT ENCLOSED SWITCH

Features •High precision and long life. •Suitable for applications demanding higher mechanical strength, •Gasket diaphragm seal provides high environmental resistance.

文件：1.0947 Mbytes 页数：4 Pages

HIGHLY

海立电气

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz

文件：43.41 Kbytes 页数：4 Pages

SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to

文件：41.1 Kbytes 页数：4 Pages

SEME-LAB

GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminations APPLICATION • 40 to 1000 MHz CATV amplifie

文件：143.96 Kbytes 页数：4 Pages

PDI

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040180GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excelle

文件：228.31 Kbytes 页数：3 Pages

RFMD

威讯联合

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040180GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excell

文件：264.95 Kbytes 页数：3 Pages

RFMD

威讯联合