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D021

型号:NTTFD021N08C;Package:WQFN12;MOSFET - Single N-Channel 80 V, 21 m, 24 A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

D0211C

型号:DGD0211CWT-7;Package:TSOT25;1.9A HIGH SPEED SINGLE GATE DRIVER

Features -EfficientLowCostSolutionforDrivingMOSFETsandIGBTs -WideSupplyVoltageOperatingRange:4.5Vto18V -1.9ASource/1.8ASinkOutputCurrentCapability -Non-InvertingandInvertingInputConfiguration -FastPropagationDelay(35nsTyp) -FastRiseandFallTimes(15nsT

DIODESDiodes Incorporated

美台半导体

D0211C

型号:DGD0211CWTQ-7;Package:TSOT25;1.9A HIGH SPEED SINGLE GATE DRIVER

Features -EfficientLow-CostSolutionforDrivingMOSFETsandIGBTs -WideSupplyVoltageOperatingRange:4.5Vto18V -1.9ASource/1.8ASinkOutputCurrentCapability -Non-InvertingandInvertingInputConfiguration -FastPropagationDelay(35nsTyp) -FastRiseandFallTimes(15nsT

DIODESDiodes Incorporated

美台半导体

D0215

型号:DGD0215WT-7;Package:TSOT25;1.9A HIGH SPEED SINGLE GATE DRIVER

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs WideSupplyVoltageOperatingRange:4.5Vto18V 1.9ASource/1.8ASinkOutputCurrentCapability InvertingandNon-InvertingInputConfigurations FastPropagationDelay(35nstyp) FastRiseandFallTimes(15nstyp) Logic

DIODESDiodes Incorporated

美台半导体

D0216

型号:DGD0216WT-7;Package:TSOT25;1.9A HIGH SPEED SINGLE GATE DRIVER

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs WideSupplyVoltageOperatingRange:4.5Vto18V 1.9ASource/1.8ASinkOutputCurrentCapability InvertingandNon-InvertingInputConfigurations FastPropagationDelay(35nstyp) FastRiseandFallTimes(15nstyp) Logic

DIODESDiodes Incorporated

美台半导体

D0212C5

型号:IDH02G120C5;Package:PG-TO220-2-1;Silicon Carbide Schottky Diode

Features: Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/Noforwardrecovery Temperatureindependentswitchingbehavior Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

D0212C5

型号:IDK02G120C5;Package:PG-TO263-2;5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
WQFN-12(3
9908
支持大陆交货,美金交易。原装现货库存。
询价
onsemi
25+
12-PowerWQFN
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
onsemi
2025+
WDFN-12
55740
询价
ON
23+
12WQFN
3000
正规渠道,只有原装!
询价
ON
23+
12WQFN
5500
原厂原装正品
询价
ON
2023+
12WQFN
8800
正品渠道现货 终端可提供BOM表配单。
询价
ON
24+
12WQFN
9000
只做原装正品 有挂有货 假一赔十
询价
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
ON SEMICONDUCTOR
24+
con
35960
查现货到京北通宇商城
询价
ON Semiconductor
2024
2950
全新、原装
询价
更多D021供应商 更新时间2025-7-30 10:22:00