丝印：D021；Package：WQFN12；MOSFET - Single N-Channel 80 V, 21 m, 24 A

文件：317.44 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：D0211C；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features - Efficient Low Cost Solution for Driving MOSFETs and IGBTs - Wide Supply Voltage Operating Range: 4.5V to 18V - 1.9A Source / 1.8A Sink Output Current Capability - Non-Inverting and Inverting Input Configuration - Fast Propagation Delay (35ns Typ) - Fast Rise and Fall Times (15ns T

文件：751.68 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：D0211C；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features - Efficient Low-Cost Solution for Driving MOSFETs and IGBTs - Wide Supply Voltage Operating Range: 4.5V to 18V - 1.9A Source / 1.8A Sink Output Current Capability - Non-Inverting and Inverting Input Configuration - Fast Propagation Delay (35ns Typ) - Fast Rise and Fall Times (15ns T

文件：781.94 Kbytes 页数：9 Pages

DIODES

美台半导体

丝印：D0215；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features Efficient Low Cost Solution for Driving MOSFETs and IGBTs Wide Supply Voltage Operating Range: 4.5V to 18V 1.9A Source / 1.8A Sink Output Current Capability Inverting and Non-Inverting Input Configurations Fast Propagation Delay (35ns typ) Fast Rise and Fall Times (15ns typ) Logic

文件：655.39 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：D0216；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features Efficient Low Cost Solution for Driving MOSFETs and IGBTs Wide Supply Voltage Operating Range: 4.5V to 18V 1.9A Source / 1.8A Sink Output Current Capability Inverting and Non-Inverting Input Configurations Fast Propagation Delay (35ns typ) Fast Rise and Fall Times (15ns typ) Logic

文件：655.39 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：846.51 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.06272 Mbytes 页数：12 Pages

Infineon

英飞凌

Silicon Carbide Schottky Diode

Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：846.51 Kbytes 页数：10 Pages

Infineon

英飞凌