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CY7C1313CV18

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18

18-Mbit QDR짰 II SRAM 4-Word Burst Architecture

文件:1.20946 Mbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-167BZC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-167BZI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-167BZXC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-167BZXI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-200BZC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-200BZI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-200BZXC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1313CV18-200BZXI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

技术参数

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,QDR II

  • 存储容量:

    18Mb (1M x 18)

  • 时钟频率:

    167MHz

  • 存储器接口:

    并联

  • 电压 - 电源:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

供应商型号品牌批号封装库存备注价格
Cypress
165-FBGA
4600
Cypress一级分销,原装原盒原包装!
询价
CY
24+
412
询价
CYPRESS
18+
BGA
85600
保证进口原装可开17%增值税发票
询价
Cypress Semiconductor Corp
21+
119-BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一级代理/放心采购
询价
CYPRESS
25+
BGA-165
1001
就找我吧!--邀您体验愉快问购元件!
询价
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
询价
Cypress
22+
165FBGA (13x15)
9000
原厂渠道,现货配单
询价
CYPRESS
25+
BGA
3000
全新原装、诚信经营、公司现货销售!
询价
cypress
25+
10
公司优势库存 热卖中!
询价
更多CY7C1313CV18供应商 更新时间2026-2-5 16:20:00