256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 4 Static RAM

Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down

文件：161.8 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司