CY7C106B-20VI中文资料赛普拉斯数据手册PDF规格书

Functional Description

The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65 when the devices are deselected.

特性 Features

• High speed

— tAA = 12 ns

• CMOS for optimum speed/power

• Low active power

— 495 mW

• Low standby power

— 275 mW

• 2.0V data retention (optional)

— 100 µW

• Automatic power-down when deselected

• TTL-compatible inputs and outputs