NPN Plastic-Encapsulate Transistors

Features ● Halogen free available upon request by adding suffix -HF ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=0.6A ● Collector-Base Voltage: V(BR)CBO=180V ● Marking

文件：309.42 Kbytes 页数：2 Pages

MCC

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Switching and amplification in high voltage. ● Low current(max. 600mA) ● High voltage (max. 180V) APPLICATIONS ● High voltage amplifier application.

文件：193.01 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.180v)

文件：737.17 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

丝印：1G6；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V)

文件：911.52 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

Plastic-Encapsulate Transistors

FEATURES • Switching and amplification in high voltage Applications such as telephony • Low current(max. 600mA) • High voltage(max.180v)

文件：285.83 Kbytes 页数：2 Pages

HOTTECH

合科泰

NPN Switching Transistor

Features | e Switching and amplification in high voltage | Applications such as telephony | e Low current(max. 600mA) | e High voltage(max.180V) |

文件：5.71392 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max • Low Saturation Vol

文件：127.17 Kbytes 页数：2 Pages

Central

SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.

文件：121.14 Kbytes 页数：2 Pages

Central

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT591E is a silicon PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. MARKING: FULL PART NUMBER

文件：289.22 Kbytes 页数：2 Pages

Central

PULLABLE QUARTZ CRYSTALS

General Description The CXT6176 and CXT8192 pullable quartz crystals ensure proper jitter attenuation and frequency tolerance for Cirrus Logic’s line interface devices. The CXT6176 is designed for use in 1.544 MHz T1 applications and the CXT8192 is designed for use in 2.048 MHz E1 applications. T

文件：79.42 Kbytes 页数：4 Pages

CIRRUS

凌云逻辑