262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

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262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK58256P/M is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58256P/M is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

文件：285.25 Kbytes 页数：7 Pages

SONYSony Corporation

索尼

32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK58256P/M is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58256P/M is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

文件：285.25 Kbytes 页数：7 Pages

SONYSony Corporation

索尼

32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK58256P/M is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58256P/M is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

文件：285.25 Kbytes 页数：7 Pages

SONYSony Corporation

索尼

32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK58256P/M is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58256P/M is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

文件：285.25 Kbytes 页数：7 Pages

SONYSony Corporation

索尼