262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 页数：11 Pages

SONYSony Corporation

索尼