131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼