65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high s

文件：154.25 Kbytes 页数：10 Pages

SONYSony Corporation

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65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high s

文件：154.25 Kbytes 页数：10 Pages

SONYSony Corporation

索尼

65536-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high s

文件：154.25 Kbytes 页数：10 Pages

SONYSony Corporation

索尼

High Speed Bi-CMOS Synchronous Static RAM

Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Feature

文件：82.52 Kbytes 页数：4 Pages

SONYSony Corporation

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High Speed Bi-CMOS Synchronous Static RAM

Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Feature

文件：82.52 Kbytes 页数：4 Pages

SONYSony Corporation

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High Speed Bi-CMOS Synchronous Static RAM

Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Feature

文件：82.52 Kbytes 页数：4 Pages

SONYSony Corporation

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High Speed Bi-CMOS Synchronous Static RAM

Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features

文件：199.29 Kbytes 页数：16 Pages

SONYSony Corporation

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High Speed Bi-CMOS Synchronous Static RAM

Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features

文件：199.29 Kbytes 页数：16 Pages

SONYSony Corporation

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High Speed Bi-CMOS Synchronous Static RAM

Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features

文件：199.29 Kbytes 页数：16 Pages

SONYSony Corporation

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32768-word by 32-bit High Speed Synchronous Static RAM

Description The CXK77V3211Q is a 32K × 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through register controlled by a positive-edge-triggered single clock input (CLK). Features • Fast address access times and High frequency ope

文件：569.97 Kbytes 页数：18 Pages

SONYSony Corporation

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