131072-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, hig

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SONYSony Corporation

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32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

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32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

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32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼

32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼

32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼

32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼

32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼

32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼

32768-word X 8-bit High Speed CMOS Static RAM

Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inp

文件：204.47 Kbytes 页数：9 Pages

SONYSony Corporation

索尼