CXK77B1810AGB-5中文资料索尼数据手册PDF规格书

Description

The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.

Features

• Fast cycle time (Cycle) (Frequency)

CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz

• Inputs and outputs are GTL/HSTL compatible

• Controlled Impedance Driver

• Single 3.3V power supply: 3.3V±0.15V

• Byte-write possible

• OE asynchronization

• JTAG test circuit

• Package 119TBGA

• 4 kinds of synchronous operation mode

Register-Register mode (R-R mode)

Register-Flow Thru mode (R-F mode)

Register-Latch mode (R-L mode)

Dual clock mode (D-C mode)

Function

65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM