N沟道基于超级结技术的功率MOSFET

漏源电压BV DSS (V)(Min.)：650导通电阻rDS(on)(mΩ)(Typ.)：480导通电阻rDS(on)(mΩ)(Max.)：600最大漏极电流Id(on)(A)：7通道极性：N沟道封装/温度(℃)：TO-252-2L/-55~125描述：650V,600mΩ,7A,N沟道基于超级结技术的功率MOSFET;

WHXY

芯源半导体

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

文件：722.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：886.6 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：886.6 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体