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CSD86336Q3DT.B

丝印:86336D;Package:VSON-CLIP;CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件:941.69 Kbytes 页数:29 Pages

TI

德州仪器

CSD86350Q5D

CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件:1.07388 Mbytes 页数:24 Pages

TI

德州仪器

CSD86350Q5D.B

CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件:1.07388 Mbytes 页数:24 Pages

TI

德州仪器

CSD86350Q5DG4.B

CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件:1.07388 Mbytes 页数:24 Pages

TI

德州仪器

CSD86350Q5DT

CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件:1.07388 Mbytes 页数:24 Pages

TI

德州仪器

CSD86350Q5DT.B

CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件:1.07388 Mbytes 页数:24 Pages

TI

德州仪器

CSD86356Q5D

丝印:86356D;Package:VSON-CLIP;CSD86356Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • H

文件:974.33 Kbytes 页数:30 Pages

TI

德州仪器

CSD86356Q5D.B

丝印:86356D;Package:VSON-CLIP;CSD86356Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • H

文件:974.33 Kbytes 页数:30 Pages

TI

德州仪器

CSD86356Q5DT

丝印:86356D;Package:VSON-CLIP;CSD86356Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • H

文件:974.33 Kbytes 页数:30 Pages

TI

德州仪器

CSD86356Q5DT.B

丝印:86356D;Package:VSON-CLIP;CSD86356Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • H

文件:974.33 Kbytes 页数:30 Pages

TI

德州仪器

技术参数

  • Configuration:

    Dual Common Source

  • Rds(on) max at VGS=4.5 V (mOhms):

    42

  • IDM - pulsed drain current (Max) (A):

    4.5

  • QG typ (nC):

    3.1

  • QGD typ (nC):

    0.33

  • Package (mm):

    WLP1.7x2.3

  • VGS (V):

    10

  • VGSTH typ (V):

    1

  • ID - silicon limited at Tc=25degC (A):

    4.5

  • ID - package limited (A):

    4.5

  • Logic level:

    Yes

供应商型号品牌批号封装库存备注价格
TI
2016+
QFN8
26317
只做原装,假一罚十,公司可开17%增值税发票!
询价
TI
17+
NA
6200
100%原装正品现货
询价
TI
24+
原厂原装
6523
进口原装公司百分百现货可出样品
询价
TI
25+
LSON-8
20
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
8SON
26317
正品原装--自家现货-实单可谈
询价
TEXAS
24+
DFN
5000
全现原装公司现货
询价
TI
1706+
SON8
9100
只做原装进口,假一罚十
询价
TI
23+
SON8
8600
受权代理!全新原装现货特价热卖!
询价
TI
23+
NA
602
专做原装正品,假一罚百!
询价
TI
QFN
6688
15
现货库存
询价
更多CSD863供应商 更新时间2025-10-4 22:58:00