EPITAXIAL PLANAR SILICON TRANSISTORS

文件：718 Kbytes 页数：4 Pages

CDIL

Dual N-Channel NexFET™ Power MOSFET

1FEATURES • Dual N-Ch MOSFETs • Common Source Configuration • Small Footprint 1.7 mm × 2.3 mm • Ultra Low Qg and Qgd • Pb Free • RoHS Compliant • Halogen Free APPLICATIONS • Battery Management • Battery Protection • DC-DC Converters DESCRIPTION The device has been designed to deli

文件：430.84 Kbytes 页数：10 Pages

TI

德州仪器

Dual N-Channel NexFET™ Power MOSFET

1FEATURES • Dual N-Ch MOSFETs • Common Source Configuration • Small Footprint 1.7 mm × 2.3 mm • Ultra Low Qg and Qgd • Pb Free • RoHS Compliant • Halogen Free APPLICATIONS • Battery Management • Battery Protection • DC-DC Converters DESCRIPTION The device has been designed to deli

文件：430.84 Kbytes 页数：10 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器