丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19533；Package：VSONP；CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：829.55 Kbytes 页数：13 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：321.95 Kbytes 页数：2 Pages

ISC

无锡固电

100 V N-Channel NexFET Power MOSFETs

文件：768.99 Kbytes 页数：10 Pages

TI

德州仪器