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CSD19531Q5A

丝印:CSD19531;Package:VSONP;CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件:798.73 Kbytes 页数:13 Pages

TI

德州仪器

CSD19531Q5A.B

丝印:CSD19531;Package:VSONP;CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件:798.73 Kbytes 页数:13 Pages

TI

德州仪器

CSD19531Q5AT

丝印:CSD19531;Package:VSONP;CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件:798.73 Kbytes 页数:13 Pages

TI

德州仪器

CSD19531Q5AT.B

丝印:CSD19531;Package:VSONP;CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件:798.73 Kbytes 页数:13 Pages

TI

德州仪器

CSD19531KCS

丝印:CSD19531KCS;Package:TO-220;CSD19531KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap telecom • Motor control 3 Description This 100V, 6.4m

文件:1.21399 Mbytes 页数:14 Pages

TI

德州仪器

CSD19531KCS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件:321.58 Kbytes 页数:2 Pages

ISC

无锡固电

CSD19531KCS.B

丝印:CSD19531KCS;Package:TO-220;CSD19531KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap telecom • Motor control 3 Description This 100V, 6.4m

文件:1.21399 Mbytes 页数:14 Pages

TI

德州仪器

CSD19531KCS

100V N-Channel NexFET??Power MOSFETs

文件:838.5 Kbytes 页数:7 Pages

TI

德州仪器

CSD19531KCS

100V N-Channel NexFE Power MOSFETs

文件:838.5 Kbytes 页数:7 Pages

TI

德州仪器

CSD19531Q5A

CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs

文件:1.43598 Mbytes 页数:14 Pages

TI

德州仪器

技术参数

  • Configuration:

    Single

  • Rds(on) max at VGS=10 V (mOhms):

    6.4

  • IDM - pulsed drain current (Max) (A):

    337

  • QG typ (nC):

    37

  • QGD typ (nC):

    6.6

  • Package (mm):

    SON5x6

  • VGS (V):

    20

  • VGSTH typ (V):

    2.7

  • ID - silicon limited at Tc=25degC (A):

    110

  • ID - package limited (A):

    100

  • Logic level:

    No

供应商型号品牌批号封装库存备注价格
TI
SON5x6
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
德州仪器/TI
24+
SC70-5
2000
全新原装深圳仓库现货有单必成
询价
TI
25+
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
21+
VSONP-8
7000
全新原装公司现货
询价
TI
23+
(DQJ)-8
1000
只做原装 支持实单 假一罚十
询价
TI/德州仪器
21+
NA
8500
一级代理品牌,价格优势原装正品准则
询价
TI
23+
VSONP-8
30000
全新原装正品
询价
TI/德州仪器
2216+
VSON8
8000
原装正品假一罚十
询价
TI
23+
VSONP-8
2500
全新原装假一赔十
询价
TI(德州仪器)
24+
VQFN8
9696
原厂可订货,技术支持,直接渠道。可签保供合同
询价
更多CSD19531供应商 更新时间2025-12-25 14:02:00