丝印：CSD18510KTT；Package：DDPAK；CSD18510KTT 40V N-Channel NexFETTM Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 1.4mΩ, D2PAK (TO-263) NexF

文件：994.27 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD18510KTT；Package：DDPAK；CSD18510KTT 40V N-Channel NexFETTM Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 1.4mΩ, D2PAK (TO-263) NexF

文件：994.27 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD18510KTT；Package：TO-263；CSD18510KTT 40V N-Channel NexFETTM Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 1.4mΩ, D2PAK (TO-263) NexF

文件：994.27 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD18510KTT；Package：TO-263；CSD18510KTT 40V N-Channel NexFETTM Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 1.4mΩ, D2PAK (TO-263) NexF

文件：994.27 Kbytes 页数：16 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：321.53 Kbytes 页数：2 Pages

ISC

无锡固电

CSD18510KTT 40-V N-Channel NexFET Power MOSFET

文件：413.74 Kbytes 页数：13 Pages

TI

德州仪器

CSD18510KTT 40-V N-Channel NexFET Power MOSFET

文件：413.74 Kbytes 页数：13 Pages

TI

德州仪器

采用 D2PAK 封装的单路、1.7mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

这款 40V、1.4mΩ、D2PAK (TO-263) NexFET功率 MOSFET 被设计成在功率转换应用中大大降低 损耗。要了解所有可用封装，请见数据表末尾的可订购产品附录。 最大 RθJC = 0.6°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%。 • 超低 Qg 和 Qgd\n• 低热阻\n• 雪崩额定值\n• 无铅引脚镀层\n• 符合 RoHS 环保标准\n• 无卤素\n• D2PAK 塑料封装;

TI

德州仪器