首页 >丝印反查>CSD18503

丝印下载 订购功能描述制造商 上传企业LOGO

CSD18503

型号:CSD18503Q5A;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5A.Z;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5AT;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5AT.Z;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5A;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5A.Z;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5AT;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

CSD18503

型号:CSD18503Q5AT.Z;Package:VSONP;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

型号:CSD18503KCS;isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:321.83 Kbytes 页数:2 Pages

ISC

无锡固电

型号:CSD18503Q5A.B;CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control

文件:435.89 Kbytes 页数:12 Pages

TI2

德州仪器

详细参数

  • 型号:

    CSD18503

  • 功能描述:

    MOSFET 40V N-Channel NexFET Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TI
2020+
QFN5x6
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
ROHS/new original
VSONP8
10500
原装元器件供应现货支持。咨询更多现货库存,支持样
询价
TI
21+
VSONP8
67500
全新原装公司现货
询价
TI
21+
VSONP8
67500
十年信誉,只做原装,有挂就有现货!
询价
TI/德州仪器
1514+
DFN56
5
原装正品 可含税交易
询价
TI/德州仪器
21+
VSONP8
8080
只做原装,质量保证
询价
TI
23+
VSONP-8
30000
全新原装正品
询价
TI/德州仪器
2152+
VSONP-8
9900
原装正品假一罚十
询价
TI
21+
VSONP-8
5000
原装现货
询价
TI
2019
QFN5x6
26500
原装正品钻石品质假一赔十
询价
更多CSD18503供应商 更新时间2025-8-7 17:16:00