CSD17382F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Low Qg and Qgd • Low threshold voltage • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 3-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2

文件：1.14058 Mbytes 页数：12 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Low-threshold voltage • Ultra-small footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.2-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.1408 Mbytes 页数：13 Pages

TI

德州仪器

丝印：CSD17501；Package：VSONP；30V, N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems • Optimized for Synchron

文件：239.06 Kbytes 页数：10 Pages

TI

德州仪器

丝印：CSD17501；Package：VSONP；30V, N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems • Optimized for Synchron

文件：239.06 Kbytes 页数：10 Pages

TI

德州仪器

N-Channel 30V(D-S) Enhancement MOSFET

Application « Load/Power switch «Interfacing, logic switching «Battery management for ultra protable: «electronics

文件：1.05384 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：CSD17505；Package：VSONP；30V, N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems • Optimized for Control

文件：244.41 Kbytes 页数：10 Pages

TI

德州仪器

丝印：CSD17505；Package：VSONP；30V, N-Channel NexFET™ Power MOSFETs

1FEATURES 2• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems • Optimized for Control

文件：244.41 Kbytes 页数：10 Pages

TI

德州仪器