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ISL8206M

CompleteHighEfficiencyDC/DCPowerModule

CompleteHighEfficiencyDC/DCPowerModule TheISL8204M,ISL8206Misafamilyofpin-compatiblepowermodulestotheISL8201M.Thesearesimpleandeasytouse,highpowerDC/DCmodulesandareidealforawidevarietyofapplications.TheISL820xMfamilyofhighcurrentDC/DCstep-downmodules

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL8206MIRZ

CompleteHighEfficiencyDC/DCPowerModule

CompleteHighEfficiencyDC/DCPowerModule TheISL8204M,ISL8206Misafamilyofpin-compatiblepowermodulestotheISL8201M.Thesearesimpleandeasytouse,highpowerDC/DCmodulesandareidealforawidevarietyofapplications.TheISL820xMfamilyofhighcurrentDC/DCstep-downmodules

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL8206MIRZ

CompleteHighEfficiencyDC/DCPowerModule

CompleteHighEfficiencyDC/DCPowerModule TheISL8204M,ISL8206Misafamilyofpin-compatiblepowermodulestotheISL8201M.Thesearesimpleandeasytouse,highpowerDCDCmodulesandareidealforawidevarietyofapplications.TheISL820xMfamilyofhighcurrentDCDCstep-downmodulesvi

Intersil

Intersil Corporation

LGB8206ARI

350V,20AN-ChannelIgnitionIGBT

Description ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDinductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvoltageandhighcurrentswitchingisrequired. Features •Integrated

Littelfuselittelfuse

力特力特公司

LGB8206ATI

350V,20AN-ChannelIgnitionIGBT

Description ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDinductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvoltageandhighcurrentswitchingisrequired. Features •Integrated

Littelfuselittelfuse

力特力特公司

LV8206T

CDandMDSystemMotorDriver

SANYOSanyo Semicon Device

三洋三洋电机株式会社

MOC8206

6-PinDIPOptoisolatorsHighVoltageTransistorOutput(400Volts)

TheMOC8204,MOC8205andMOC8206devicesconsistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsol

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

NGB8206AN

IgnitionIGBT20A,350V,N.ChannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGB8206AN

Gate?묮mitterESDProtection

Description ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver−Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvoltageandhighcurrents

Littelfuselittelfuse

力特力特公司

NGB8206N

IgnitionIGBT20A,350V,N?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
CS
24+
NA/
3276
原装现货,当天可交货,原型号开票
询价
CS
25+
DIP-20
26
原装正品,假一罚十!
询价
CS
23+
DIP-20
50000
全新原装正品现货,支持订货
询价
CS
01+
DIP-20
1000
进口原装现货假一赔万力挺实单
询价
23+
DIP-22
1050
正品原装货价格低
询价
CHENSEN
24+
DIP
3600
绝对原装!现货热卖!
询价
CHENSEN
23+
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CHESEN
2023+
DIP40
8700
原装现货
询价
CIRRUS
24+
MSOP10
18766
公司现货库存,支持实单
询价
CHESEN
24+/25+
114
原装正品现货库存价优
询价
更多CS8206ALGP供应商 更新时间2025-5-25 23:01:00