丝印：GB8206A；Package：D2PAK；350 V, 20 A N-Channel Ignition IGBT

Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Integrated

文件：443.73 Kbytes 页数：9 Pages

LITTELFUSE

力特

350 V, 20 A N-Channel Ignition IGBT

Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Integrated

文件：443.73 Kbytes 页数：9 Pages

LITTELFUSE

力特

CD and MD System Motor Driver

文件：302.06 Kbytes 页数：14 Pages

SANYO

三洋

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

文件：295.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉