CS11N70F规格书批发供应锴威特Convert-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CS11N70F	文件：300 bytes Page：1 Pages	Planar MOSFET	Convert 锴威特	Convert
GC11N70F	文件：765.67 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：765.67 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
GC11N70F	文件：2.47652 Mbytes Page：9 Pages	Power Factor Correction (PFC) Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre 文件：2.47652 Mbytes 页数：9 Pages	GOFORD 谷峰半导体	GOFORD
GC11N70J	文件：2.47652 Mbytes Page：9 Pages	Power Factor Correction (PFC) Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre 文件：2.47652 Mbytes 页数：9 Pages	GOFORD 谷峰半导体	GOFORD

更多CS11N70F供应商更新时间2025-12-19 15:01:00