Silicon Carbide Power MOSFET C3M TM MOSFET Technology Industry Leading Performance

Features • High blocking voltage with low on-resistance • Resistant to Latch-up • Fast intrinsic diode with low reverse recovery (Qrr) • Easy to parallel and simple to drive Benefits • Higher system efficiency • Reduced cooling requirements • Low conduction losses over temperature • Incre

文件：471.47 Kbytes 页数：7 Pages

WOLFSPEED

Wolfspeed SiC Gen 3 MOSFET

Description This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for hi

文件：1.10052 Mbytes 页数：7 Pages

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology Industry Leading Performance

Features • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Easy to parallel and simple to drive • Gold back metal Benefits • Higher system efficiency • Reduced cooling requirements • Increas

文件：420.73 Kbytes 页数：7 Pages

WOLFSPEED

Wolfspeed SiC Gen 3 MOSFET

Description This is Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for ap

文件：580.37 Kbytes 页数：8 Pages

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technlogy • High Blocking Voltage with Low RDS(on) • Easy to parallel and simple to drive • Resistant to Latch-up Benefits • Higher System Efficiency • Low Conduction Losses over Temperature • Reduced Cooling Requirements • Increased System Switching Frequency A

文件：647.94 Kbytes 页数：7 Pages

WOLFSPEED

Wolfspeed SiC Gen3 MOSFET

Description This is Wolfspeed’s 3rd generation high-performance silicon carbide MOSFET in a package-less bare die format to be implemented into any custom module design. Features • Enhanced 3rd Generation SiC MOSFET • High blocking voltage with low on-resistance • Easy to parallel and simpl

文件：1.36502 Mbytes 页数：8 Pages

WOLFSPEED

Wolfspeed SiC Gen 4 MOSFET

Description This is the Wolfspeed’s 4th generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for hi

文件：1.038619 Mbytes 页数：7 Pages

WOLFSPEED

Wolfspeed SiC Gen 4 MOSFET

Description This is the Wolfspeed’s 4th generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for hi

文件：1.03791 Mbytes 页数：7 Pages

WOLFSPEED

Wolfspeed SiC Gen 4 MOSFET

Description This is Wolfspeed’s 4th generation of high-performance silicon carbide MOSFET in a package less bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance makes this MOSFET ideal for high

文件：1.30593 Mbytes 页数：8 Pages

WOLFSPEED

DATA CABLING

20 AWG D-SUB CABLE ASSEMBLY

文件：151.85 Kbytes 页数：1 Pages

L-COM

英飞畅