Wolfspeed SiC Gen3 MOSFET

Description This is Wolfspeed’s 3rd generation high-performance silicon carbide MOSFET in a package-less bare die format to be implemented into any custom module design. Features • Enhanced 3rd Generation SiC MOSFET • High blocking voltage with low on-resistance • Easy to parallel and simpl

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WOLFSPEED

Bare Die Silicon Carbide Schottky Diodes

Wolfspeed extends its Silicon Carbide technology leadership with the introduction of 3300 V Silicon Carbide Bare Die MOSFETs, enabling high system efficiency and smaller power dense systems with high reliability. The 3300 V Silicon Carbide MOSFET is optimized for use in high power applications such • High blocking voltage with Low RDS(on)\n• Easy to Parallel and Simple to Drive\n• Temperature-Independent High-Speed Switching\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Avalanche Ruggedness\n• Industry Leading reliable SiC MOSFET Technology;

Wolfspeed(CREE)