CPM3-3300-R050A

Wolfspeed SiC Gen3 MOSFET

Description ThisisWolfspeed’s3rdgenerationhigh-performancesiliconcarbideMOSFETinapackage-lessbaredieformattobeimplementedintoanycustommoduledesign. Features •Enhanced3rdGenerationSiCMOSFET •Highblockingvoltagewithlowon-resistance •Easytoparallelandsimpl

CPM3-3300-R050A

Bare Die Silicon Carbide Schottky Diodes; • High blocking voltage with Low RDS(on)\n• Easy to Parallel and Simple to Drive\n• Temperature-Independent High-Speed Switching\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Avalanche Ruggedness\n• Industry Leading reliable SiC MOSFET Technology\n;

Wolfspeed extends its Silicon Carbide technology leadership with the introduction of 3300 V Silicon Carbide Bare Die MOSFETs, enabling high system efficiency and smaller power dense systems with high reliability. The 3300 V Silicon Carbide MOSFET is optimized for use in high power applications such as rail traction, heavy duty equipment, industrial UPS, industrial motor drives, and more.